CSD25404Q3 Datasheet دیتاشیت

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مشاهده دیتاشیت CSD25404Q3 Datasheet	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD25404Q3T
Power Dissipation (Pd): 96W
Drain Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 104A
Gate Threshold Voltage (Vgs(th)@Id): 1.15V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 6.5mΩ@4.5V,10A
Package: VSON-CLIP-8(3.3x3.3)
Manufacturer: Texas Instruments
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V
Vgs (Max): ±12V
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
FET Feature: -
Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Part Status: Active
Series: NexFET™
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 4.5V
Supplier Device Package: 8-VSON (3.3x3.3)
Mounting Type: Surface Mount
Base Part Number: CSD2540
detail: P-Channel 20V 104A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount 8-VSON (3.3x3.3)